80V,Drain to Source Voltage (Vdss)
53nC @ 10V,Gate Charge (Qg) @ Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMC86340 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 80V 48A 6.5 mOhm @ 14A, 10V 4V @ 250µA 53nC @ 10V 3885pF @ 40V 54W Surface Mount 8-PowerWDFN
AON6448 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 80V 11A (Ta), 65A (Tc) 9.6 mOhm @ 10A, 10V 3.7V @ 250µA 53nC @ 10V 3100pF @ 40V 2.5W Surface Mount 8-PowerVDFN
IRF7493PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 80V 9.3A (Tc) 15 mOhm @ 5.6A, 10V 4V @ 250µA 53nC @ 10V 1510pF @ 25V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7493TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 80V 9.3A (Tc) 15 mOhm @ 5.6A, 10V 4V @ 250µA 53nC @ 10V 1510pF @ 25V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7493TR INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 80V 9.3A (Tc) 15 mOhm @ 5.6A, 10V 4V @ 250µA 53nC @ 10V 1510pF @ 25V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4110DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 80V 17.3A (Tc) 13 mOhm @ 11.7A, 10V 4V @ 250µA 53nC @ 10V 2205pF @ 40V 7.8W Surface Mount 8-SOIC (0.154", 3.90mm Width)