FDS3590 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
6.5A
|
39 mOhm @ 6.5A, 10V
|
4V @ 250µA
|
35nC @ 10V
|
1180pF @ 40V
|
1W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
FDS3890 |
FAIRCHILD SEMICONDUCTOR CORP |
|
2 N-Channel (Dual)
|
80V
|
4.7A
|
44 mOhm @ 4.7A, 10V
|
4V @ 250µA
|
35nC @ 10V
|
1180pF @ 40V
|
900mW
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
IPB097N08N3 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
70A
|
9.7 mOhm @ 46A, 10V
|
3.5V @ 46µA
|
35nC @ 10V
|
2410pF @ 40V
|
100W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
IPP100N08N3 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
70A (Tc)
|
10 mOhm @ 46A, 10V
|
3.5V @ 46µA
|
35nC @ 10V
|
2410pF @ 40V
|
100W
|
Through Hole
|
TO-220-3
|
IPA100N08N3 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
40A (Tc)
|
10 mOhm @ 40A, 10V
|
3.5V @ 46µA
|
35nC @ 10V
|
2410pF @ 40V
|
35W
|
Through Hole
|
TO-220-3 Full Pack
|
IPD096N08N3 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
73A (Tc)
|
9.6 mOhm @ 46A, 10V
|
3.5V @ 46µA
|
35nC @ 10V
|
2410pF @ 40V
|
100W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
IPI100N08N3 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
70A (Tc)
|
10 mOhm @ 46A, 10V
|
3.5V @ 46µA
|
35nC @ 10V
|
2410pF @ 40V
|
100W
|
Through Hole
|
TO-262-3 Long Leads, I²Pak, TO-262AA
|
IPU103N08N3 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
50A (Tc)
|
10.3 mOhm @ 46A, 10V
|
3.5V @ 46µA
|
35nC @ 10V
|
2410pF @ 40V
|
100W
|
Through Hole
|
TO-251-3 Long Leads, IPak, TO-251AB
|
RJK0855DPB-00#J5 |
RENESAS ELECTRONICS CORP |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
30A (Ta)
|
11 mOhm @ 15A, 10V
|
-
|
35nC @ 10V
|
2550pF @ 10V
|
60W
|
Surface Mount
|
SC-100, SOT-669
|
TPH8R008NH,L1Q |
TOSHIBA CORP |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
34A (Tc)
|
8 mOhm @ 17A, 10V
|
4V @ 500µA
|
35nC @ 10V
|
3000pF @ 40V
|
61W
|
Surface Mount
|
8-PowerVDFN
|