80V,Drain to Source Voltage (Vdss)
155nC @ 10V,Gate Charge (Qg) @ Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMS86350 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 80V 80A 2.4 mOhm @ 25A, 10V 4.5V @ 250µA 155nC @ 10V 10680pF @ 40V 2.7W Surface Mount 8-PowerTDFN
SI7455DP-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 10.5A (Ta), 28A (Tc) 25 mOhm @ 10.5A, 10V 4V @ 250µA 155nC @ 10V 5160pF @ 40V 83.3W Surface Mount PowerPAK® SO-8
SI7455DP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 10.5A (Ta), 28A (Tc) 25 mOhm @ 10.5A, 10V 4V @ 250µA 155nC @ 10V 5160pF @ 40V 83.3W Surface Mount PowerPAK® SO-8
SQJ469EP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 32A (Tc) 25 mOhm @ 10.2A, 10V 2.5V @ 250µA 155nC @ 10V 5100pF @ 40V 100W Surface Mount PowerPAK® SO-8
SUD50P08-26-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 50A (Tc) 26 mOhm @ 12.9A, 10V 4V @ 250µA 155nC @ 10V 5160pF @ 40V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63