80V,Drain to Source Voltage (Vdss)
3.5V @ 155µA,Vgs(th) (Max) @ Id
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPP037N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 100A (Tc) 3.75 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 214W Through Hole TO-220-3
IPB030N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 160A 3 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 214W Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IPB035N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 100A 3.5 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 214W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPA037N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 75A (Tc) 3.7 mOhm @ 75A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 41W Through Hole TO-220-3 Full Pack
IPI037N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 100A (Tc) 3.75 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 214W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP037N08N3 G E8181 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 100A (Tc) 3.75 mOhm @ 100A, 10V 3.5V @ 155µA 117nC @ 10V 8110pF @ 40V 214W Through Hole TO-220-3