80V,Drain to Source Voltage (Vdss)
80A (Tc),Current - Continuous Drain (Id) @ 25°C
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STB76NF80 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 80V 80A (Tc) 11 mOhm @ 40A, 10V 4V @ 250µA 160nC @ 10V 3700pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK46E08N1,S1X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 80V 80A (Tc) 8.4 mOhm @ 23A, 10V 4V @ 500µA 37nC @ 10V 2500pF @ 40V 103W Through Hole TO-220-3
IPP057N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 80A (Tc) 5.7 mOhm @ 80A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 150W Through Hole TO-220-3
IPI057N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 80A (Tc) 5.7 mOhm @ 80A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 150W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPI070N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 80A (Tc) 7 mOhm @ 73A, 10V 3.5V @ 73µA 56nC @ 10V 3840pF @ 40V 136W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP070N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 80A (Tc) 7 mOhm @ 73A, 10V 3.5V @ 73µA 56nC @ 10V 3840pF @ 40V 136W Through Hole TO-220-3
IXFT80N08 IXYS CORP
MOSFET N-Channel, Metal Oxide 80V 80A (Tc) 9 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 300W Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFC80N08 IXYS CORP
MOSFET N-Channel, Metal Oxide 80V 80A (Tc) 11 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 230W Through Hole -
IXFH80N08 IXYS CORP
MOSFET N-Channel, Metal Oxide 80V 80A (Tc) 9 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 300W Through Hole TO-247-3