| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPA057N08N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 80V | 60A (Tc) | 5.7 mOhm @ 60A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 39W | Through Hole | TO-220-3 Full Pack | |
| PSMN013-80YS,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 80V | 60A (Tc) | 12.9 mOhm @ 15A, 10V | 4V @ 1mA | 37nC @ 10V | 2420pF @ 40V | 106W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| TPH4R008NH,L1Q | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 80V | 60A (Tc) | 4 mOhm @ 30A, 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | 78W | Surface Mount | 8-PowerVDFN | |
| SIJ478DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 80V | 60A (Tc) | 8 mOhm @ 20A, 10V | 2.6V @ 250µA | 54nC @ 10V | 1855pF @ 40V | 62.5W | Surface Mount | PowerPAK® SO-8 | |
| SIR880DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 80V | 60A (Tc) | 5.9 mOhm @ 20A, 10V | 2.8V @ 250µA | 74nC @ 10V | 2440pF @ 40V | 104W | Surface Mount | PowerPAK® SO-8 |
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