| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPU135N08N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 80V | 50A (Tc) | 13.5 mOhm @ 50A, 10V | 3.5V @ 33µA | 25nC @ 10V | 1730pF @ 40V | 79W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | |
| IPU103N08N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 80V | 50A (Tc) | 10.3 mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | 100W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | |
| STP50NE08 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 80V | 50A (Tc) | 24 mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | 5100pF @ 25V | 150W | Through Hole | TO-220-3 | |
| SUD50P08-25L-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 80V | 50A (Tc) | 25.2 mOhm @ 12.5A, 10V | 3V @ 250µA | 160nC @ 10V | 4700pF @ 40V | 136W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SUD50P08-26-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 80V | 50A (Tc) | 26 mOhm @ 12.9A, 10V | 4V @ 250µA | 155nC @ 10V | 5160pF @ 40V | 136W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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