65V,Drain to Source Voltage (Vdss)
2A (Ta),Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
EPC8002ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 2A (Ta) 530 mOhm @ 500mA, 5V 2.5V @ 250µA - 21pF @ 32.5V - Surface Mount Die
EPC8002TENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 2A (Ta) 530 mOhm @ 500mA, 5V 2.5V @ 250µA 0.141nC @ 32.5V 21pF @ 32.5V - Surface Mount Die