IXTA28P065T |
IXYS CORP |
|
MOSFET P-Channel, Metal Oxide
|
65V
|
28A (Tc)
|
45 mOhm @ 14A, 10V
|
4.5V @ 250µA
|
46nC @ 10V
|
2030pF @ 25V
|
83W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
IXTP28P065T |
IXYS CORP |
|
MOSFET P-Channel, Metal Oxide
|
65V
|
28A (Tc)
|
45 mOhm @ 14A, 10V
|
4.5V @ 250µA
|
46nC @ 10V
|
2030pF @ 25V
|
83W
|
Through Hole
|
TO-220-3
|
IXTP130N065T2 |
IXYS CORP |
|
MOSFET N-Channel, Metal Oxide
|
65V
|
130A (Tc)
|
6.6 mOhm @ 50A, 10V
|
4V @ 250µA
|
79nC @ 10V
|
4800pF @ 25V
|
250W
|
Through Hole
|
TO-220-3
|
EPC8005ENGR |
EPCOS AG |
|
GaNFET N-Channel, Gallium Nitride
|
65V
|
2.9A (Ta)
|
275 mOhm @ 500mA, 5V
|
2.5V @ 250µA
|
0.218nC @ 32.5V
|
29pF @ 32.5V
|
-
|
Surface Mount
|
Die
|
EPC8009ENGR |
EPCOS AG |
|
GaNFET N-Channel, Gallium Nitride
|
65V
|
4.1A (Ta)
|
138 mOhm @ 500mA, 5V
|
2.5V @ 250µA
|
0.380nC @ 32.5V
|
47pF @ 32.5V
|
-
|
Surface Mount
|
Die
|
EPC8002ENGR |
EPCOS AG |
|
GaNFET N-Channel, Gallium Nitride
|
65V
|
2A (Ta)
|
530 mOhm @ 500mA, 5V
|
2.5V @ 250µA
|
-
|
21pF @ 32.5V
|
-
|
Surface Mount
|
Die
|
EPC8009TENGR |
EPCOS AG |
|
GaNFET N-Channel, Gallium Nitride
|
65V
|
4.1A (Tc)
|
138 mOhm @ 500mA, 5V
|
2.5V @ 250µA
|
0.380nC @ 32.5V
|
47pF @ 32.5V
|
-
|
Surface Mount
|
Die
|
EPC8005TENGR |
EPCOS AG |
|
GaNFET N-Channel, Gallium Nitride
|
65V
|
2.9A (Ta)
|
275 mOhm @ 500mA, 5V
|
2.5V @ 250µA
|
0.218nC @ 32.5V
|
29pF @ 32.5V
|
-
|
Surface Mount
|
Die
|
EPC8002TENGR |
EPCOS AG |
|
GaNFET N-Channel, Gallium Nitride
|
65V
|
2A (Ta)
|
530 mOhm @ 500mA, 5V
|
2.5V @ 250µA
|
0.141nC @ 32.5V
|
21pF @ 32.5V
|
-
|
Surface Mount
|
Die
|
IXTA130N065T2 |
IXYS CORP |
|
MOSFET N-Channel, Metal Oxide
|
65V
|
130A (Tc)
|
6.6 mOhm @ 50A, 10V
|
4V @ 250µA
|
79nC @ 10V
|
4800pF @ 25V
|
250W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|