| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB65R660CFD | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 6A (Tc) | 660 mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | 62.5W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPI65R660CFD | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 6A (Tc) | 660 mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | 62.5W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IPD65R660CFD | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 6A (Tc) | 660 mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | 62.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPP65R660CFD | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 6A (Tc) | 660 mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | 62.5W | Through Hole | TO-220-3 |
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