650V,Drain to Source Voltage (Vdss)
190W,Power - Max
14 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STB42N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 33A (Tc) 79 mOhm @ 16.5A, 10V 5V @ 250µA 100nC @ 10V 4650pF @ 100V 190W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP38N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 30A (Tc) 95 mOhm @ 15A, 10V 5V @ 250µA 71nC @ 10V 3000pF @ 100V 190W Through Hole TO-220-3
STP42N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 33A (Tc) 79 mOhm @ 16.5A, 10V 5V @ 250µA 100nC @ 10V 4650pF @ 100V 190W Through Hole TO-220-3
STW42N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 33A (Tc) 79 mOhm @ 16.5A, 10V 5V @ 250µA 100nC @ 10V 4650pF @ 100V 190W Through Hole TO-247-3
STB38N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 30A (Tc) 95 mOhm @ 15A, 10V 5V @ 250µA 71nC @ 10V 3000pF @ 100V 190W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP34N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 28A (Tc) 110 mOhm @ 14A, 10V 5V @ 250µA 62.5nC @ 10V 2700pF @ 100V 190W Through Hole TO-220-3
STW38N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 30A (Tc) 95 mOhm @ 15A, 10V 5V @ 250µA 71nC @ 10V 3000pF @ 100V 190W Through Hole TO-247-3
STB34N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 28A (Tc) 110 mOhm @ 14A, 10V 5V @ 250µA 62.5nC @ 10V 2700pF @ 100V 190W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STW34N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 28A (Tc) 110 mOhm @ 14A, 10V 5V @ 250µA 62.5nC @ 10V 2700pF @ 100V 190W Through Hole TO-247-3
STI34N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 28A (Tc) 110 mOhm @ 14A, 10V 5V @ 250µA 62.5nC @ 10V 2700pF @ 100V 190W Through Hole TO-262-3 Full Pack, I²Pak