| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB65R150CFDATMA1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPS65R1K4C6AKMA1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 3.2A (Tc) | 1.4 Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | 225pF @ 100V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | |
| IPS65R950C6AKMA1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 4.5A (Tc) | 950 mOhm @ 1.5A, 10V | 3.5V @ 200µA | - | 328pF @ 100V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | |
| IPI65R099C6XKSA1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | 2780pF @ 100V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IPB65R099C6ATMA1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | 2780pF @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPI65R150CFDXKSA1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IRFP22N60C3PBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 22A (Ta) | - | - | - | - | - | Through Hole | TO-247-3 |
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