650V,Drain to Source Voltage (Vdss)
68nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AOK18N65L ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 650V 18A (Tc) 390 mOhm @ 9A, 10V 4.5V @ 250µA 68nC @ 10V 3785pF @ 25V 417W Through Hole TO-247-3
AOTF18N65 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 650V 18A (Tc) 390 mOhm @ 9A, 10V 4.5V @ 250µA 68nC @ 10V 3785pF @ 25V 50W Through Hole TO-220-3 Full Pack
AOTF18N65L ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 650V 18A (Tc) 390 mOhm @ 9A, 10V 4.5V @ 250µA 68nC @ 10V 3785pF @ 25V 50W Through Hole TO-220-3 Full Pack
IPB65R190CFD INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 17.5A (Tc) 190 mOhm @ 7.3A, 10V 4.5V @ 730µA 68nC @ 10V 1850pF @ 100V 151W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPA65R190CFD INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 17.5A (Tc) 190 mOhm @ 7.3A, 10V 4.5V @ 730µA 68nC @ 10V 1850pF @ 100V 34W Through Hole TO-220-3 Full Pack
IPP65R190CFD INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 17.5A (Tc) 190 mOhm @ 7.3A, 10V 4.5V @ 730µA 68nC @ 10V 1850pF @ 100V 151W Through Hole TO-220-3
IPW65R190CFD INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 17.5A (Tc) 190 mOhm @ 7.3A, 10V 4.5V @ 730µA 68nC @ 10V 1850pF @ 100V 151W Through Hole TO-247-3
IPI65R190CFD INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 17.5A (Tc) 190 mOhm @ 7.3A, 10V 4.5V @ 730µA 68nC @ 10V 1850pF @ 100V 151W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA