650V,Drain to Source Voltage (Vdss)
60nC @ 10V,Gate Charge (Qg) @ Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SPB11N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 125W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPA11N65C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 33W Through Hole TO-220-3 Full Pack
SPW11N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 125W Through Hole TO-247-3
SPP11N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 125W Through Hole TO-220-3
SPI11N65C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 125W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
SPP11N65C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 125W Through Hole TO-220-3
SPI11N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 125W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
SPA11N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 33W Through Hole TO-220-3 Full Pack
STP20NM60A STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 20A (Tc) 290 mOhm @ 10A, 10V 4V @ 250µA 60nC @ 10V 1630pF @ 25V 192W Through Hole TO-220-3