| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPP60R299CP | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 11A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | 96W | Through Hole | TO-220-3 | |
| STD11NM65N | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 650V | 11A (Tc) | 455 mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | 800pF @ 50V | 110W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| STP11NM65N | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 650V | 11A (Tc) | 455 mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | 800pF @ 50V | 110W | Through Hole | TO-220-3 | |
| STFI11NM65N | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 650V | 11A (Tc) | 455 mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | 800pF @ 50V | 25W | Through Hole | TO-262-3 Full Pack, I²Pak | |
| STF11NM65N | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 650V | 11A (Tc) | 455 mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | 800pF @ 50V | 25W | Through Hole | TO-220-3 Full Pack |
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