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650V,Drain to Source Voltage (Vdss)

4.5V @ 200µA,Vgs(th) (Max) @ Id

6 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

IPB65R660CFD INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 650V 6A (Tc) 660 mOhm @ 2.1A, 10V 4.5V @ 200µA 22nC @ 10V 615pF @ 100V 62.5W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPI65R660CFD INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 650V 6A (Tc) 660 mOhm @ 2.1A, 10V 4.5V @ 200µA 22nC @ 10V 615pF @ 100V 62.5W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

IPD65R950CFDBTMA1 INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 650V 3.9A (Tc) 950 mOhm @ 1.5A, 10V 4.5V @ 200µA 14.1nC @ 10V 380pF @ 100V 36.7W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63

IPD65R660CFD INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 650V 6A (Tc) 660 mOhm @ 2.1A, 10V 4.5V @ 200µA 22nC @ 10V 615pF @ 100V 62.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63

IPP65R660CFD INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 650V 6A (Tc) 660 mOhm @ 2.1A, 10V 4.5V @ 200µA 22nC @ 10V 615pF @ 100V 62.5W Through Hole TO-220-3

IPA65R660CFD INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 650V 6A (Tc) 660 mOhm @ 2.1A, 10V 4.5V @ 200µA 22nC @ 10V 615pF @ 100V 27.8W Through Hole TO-220-3 Full Pack

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
IPB65R660CFD	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	650V	6A (Tc)	660 mOhm @ 2.1A, 10V	4.5V @ 200µA	22nC @ 10V	615pF @ 100V	62.5W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPI65R660CFD	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	650V	6A (Tc)	660 mOhm @ 2.1A, 10V	4.5V @ 200µA	22nC @ 10V	615pF @ 100V	62.5W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA
IPD65R950CFDBTMA1	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	650V	3.9A (Tc)	950 mOhm @ 1.5A, 10V	4.5V @ 200µA	14.1nC @ 10V	380pF @ 100V	36.7W	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R660CFD	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	650V	6A (Tc)	660 mOhm @ 2.1A, 10V	4.5V @ 200µA	22nC @ 10V	615pF @ 100V	62.5W	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP65R660CFD	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	650V	6A (Tc)	660 mOhm @ 2.1A, 10V	4.5V @ 200µA	22nC @ 10V	615pF @ 100V	62.5W	Through Hole	TO-220-3
IPA65R660CFD	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	650V	6A (Tc)	660 mOhm @ 2.1A, 10V	4.5V @ 200µA	22nC @ 10V	615pF @ 100V	27.8W	Through Hole	TO-220-3 Full Pack

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