650V,Drain to Source Voltage (Vdss)
4.4V @ 1mA,Vgs(th) (Max) @ Id
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TK2A65D(STA4,Q,M) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 2A (Ta) 3.26 Ohm @ 1A, 10V 4.4V @ 1mA 9nC @ 10V 380pF @ 25V 30W Through Hole TO-220-3 Full Pack
TK5A65DA(STA4,Q,M) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 4.5A (Ta) 1.67 Ohm @ 2.3A, 10V 4.4V @ 1mA 16nC @ 10V 700pF @ 25V 35W Through Hole TO-220-3 Full Pack
TK3A65D(STA4,Q,M) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 3A (Ta) 2.25 Ohm @ 1.5A, 10V 4.4V @ 1mA 11nC @ 10V 540pF @ 25V 35W Through Hole TO-220-3 Full Pack
TK3A65DA(STA4,QM) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 2.5A (Ta) 2.51 Ohm @ 1.3A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 35W Through Hole TO-220-3 Full Pack
TK4A65DA(STA4,Q,M) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 3.5A (Ta) 1.9 Ohm @ 1.8A, 10V 4.4V @ 1mA 12nC @ 10V 600pF @ 25V 35W Through Hole TO-220-3 Full Pack