650V,Drain to Source Voltage (Vdss)
3.5V @ 210µA,Vgs(th) (Max) @ Id
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPD65R600C6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 7.3A (Tc) 600 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 63W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R600E6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 7.3A (Tc) 600 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 63W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPB65R600C6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 7.3A (Tc) 600 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 63W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPA65R600E6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 7.3A (Tc) 600 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 28W Through Hole TO-220-3 Full Pack
IPI65R600C6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 7.3A (Tc) 600 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 63W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP65R600C6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 7.3A (Tc) 600 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 63W Through Hole TO-220-3
IPP65R600E6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 7.3A (Tc) 600 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 63W Through Hole TO-220-3
IPA65R600C6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 7.3A (Tc) 600 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 28W Through Hole TO-220-3 Full Pack