650V,Drain to Source Voltage (Vdss)
99 mOhm @ 12.8A, 10V,Rds On (Max) @ Id, Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPW65R099C6FKSA1 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 38A (Tc) 99 mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127nC @ 10V 2780pF @ 100V 278W Through Hole TO-247-3
IPI65R099C6XKSA1 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 38A (Tc) 99 mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127nC @ 10V 2780pF @ 100V - Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP65R099C6XKSA1 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 38A (Tc) 99 mOhm @ 12.8A, 10V 3.5V @ 1.2mA 15nC @ 10V 2780pF @ 100V 278W Through Hole TO-220-3
IPA65R099C6XKSA1 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 38A (Tc) 99 mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127nC @ 10V 2780pF @ 100V 35W Through Hole TO-220-3 Full Pack
IPB65R099C6ATMA1 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 38A (Tc) 99 mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127nC @ 10V 2780pF @ 100V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB