650V,Drain to Source Voltage (Vdss)
930 mOhm @ 5.1A, 10V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFB9N65APBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 930 mOhm @ 5.1A, 10V 4V @ 250µA 48nC @ 10V 1417pF @ 25V 167W Through Hole TO-220-3
IRFB9N65A VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 930 mOhm @ 5.1A, 10V 4V @ 250µA 48nC @ 10V 1417pF @ 25V 167W Through Hole TO-220-3