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650V,Drain to Source Voltage (Vdss)

450 mOhm @ 5.5A, 10V,Rds On (Max) @ Id, Vgs

3 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

STP11NM60 STMICROELECTRONICS

MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 160W Through Hole TO-220-3

STB11NM60-1 STMICROELECTRONICS

MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 160W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

STB11NM60T4 STMICROELECTRONICS

MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 160W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
STP11NM60	STMICROELECTRONICS	MOSFET N-Channel, Metal Oxide	650V	11A (Tc)	450 mOhm @ 5.5A, 10V	5V @ 250µA	30nC @ 10V	1000pF @ 25V	160W	Through Hole	TO-220-3
STB11NM60-1	STMICROELECTRONICS	MOSFET N-Channel, Metal Oxide	650V	11A (Tc)	450 mOhm @ 5.5A, 10V	5V @ 250µA	30nC @ 10V	1000pF @ 25V	160W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA
STB11NM60T4	STMICROELECTRONICS	MOSFET N-Channel, Metal Oxide	650V	11A (Tc)	450 mOhm @ 5.5A, 10V	5V @ 250µA	30nC @ 10V	1000pF @ 25V	160W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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