650V,Drain to Source Voltage (Vdss)
310 mOhm @ 4.4A, 10V,Rds On (Max) @ Id, Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPW65R310CFD INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 440µA 41nC @ 10V 1100pF @ 100V 104.2W Through Hole TO-247-3
IPB65R310CFD INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 400µA 41nC @ 10V 1100pF @ 100V 104.2W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPP65R310CFD INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 440µA 41nC @ 10V 1100pF @ 100V 104.2W Through Hole TO-220-3
IPI65R310CFD INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 440µA 41nC @ 10V 1100pF @ 100V 104.2W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPA65R310CFD INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 440µA 41nC @ 10V 1100pF @ 100V 32W Through Hole TO-220-3 Full Pack