650V,Drain to Source Voltage (Vdss)
250 mOhm @ 7.8A, 10V,Rds On (Max) @ Id, Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPP60R250CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 12A (Tc) 250 mOhm @ 7.8A, 10V 3.5V @ 440µA 35nC @ 10V 1200pF @ 100V 104W Through Hole TO-220-3
IPW60R250CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 12A (Tc) 250 mOhm @ 7.8A, 10V 3.5V @ 440µA 35nC @ 10V 1200pF @ 100V 104W Through Hole TO-247-3
IPB60R250CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 12A (Tc) 250 mOhm @ 7.8A, 10V 3.5V @ 440µA 35nC @ 10V 1200pF @ 100V 104W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPA60R250CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 12A (Tc) 250 mOhm @ 7.8A, 10V 3.5V @ 440µA 35nC @ 10V 1300pF @ 100V 33W Through Hole TO-220-3 Full Pack
IPI60R250CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 12A (Tc) 250 mOhm @ 7.8A, 10V 3.5V @ 440µA 35nC @ 10V 1200pF @ 100V 104W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA