650V,Drain to Source Voltage (Vdss)
199 mOhm @ 9.9A, 10V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPL60R199CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 16.4A (Tc) 199 mOhm @ 9.9A, 10V 3.5V @ 660µA 32nC @ 10V 1520pF @ 100V 139W Surface Mount 4-TSFN Exposed Pad
IPA60R199CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 16A (Tc) 199 mOhm @ 9.9A, 10V 3.5V @ 1.1mA 43nC @ 10V 1520pF @ 100V 34W Through Hole TO-220-3 Full Pack
IPP60R199CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 16A (Tc) 199 mOhm @ 9.9A, 10V 3.5V @ 660µA 43nC @ 10V 1520pF @ 100V 139W Through Hole TO-220-3
IPB60R199CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 16A 199 mOhm @ 9.9A, 10V 3.5V @ 660µA 43nC @ 10V 1520pF @ 100V 139W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB