650V,Drain to Source Voltage (Vdss)
145 mOhm @ 12A, 10V,Rds On (Max) @ Id, Vgs
Through Hole,Mounting Type
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SIHP24N65E-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 650V 24A (Tc) 145 mOhm @ 12A, 10V 4V @ 250µA 122nC @ 10V 2740pF @ 100V 250W Through Hole TO-220-3
SIHP24N65E-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 650V 24A (Tc) 145 mOhm @ 12A, 10V 4V @ 250µA 122nC @ 10V 2740pF @ 100V 250W Through Hole TO-220-3
SIHG24N65E-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 650V 24A (Tc) 145 mOhm @ 12A, 10V 4V @ 250µA 122nC @ 10V 2740pF @ 100V 250W Through Hole TO-247-3
SIHG24N65E-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 650V 24A (Tc) 145 mOhm @ 12A, 10V 4V @ 250µA 122nC @ 10V 2740pF @ 100V 250W Through Hole TO-247-3