650V,Drain to Source Voltage (Vdss)
9A (Tc),Current - Continuous Drain (Id) @ 25°C
13 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMG9N65CT DIODES INC
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 1.3 Ohm @ 4.5A, 10V 5V @ 250µA 39nC @ 10V 2310pF @ 25V 165W Through Hole TO-220-3
STD11N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 480 mOhm @ 4.5A, 10V 5V @ 250µA 17nC @ 10V 620pF @ 100V 85W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STD10NM65N STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 480 mOhm @ 4.5A, 10V 4V @ 250µA 25nC @ 10V 850pF @ 50V 90W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STF11N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 480 mOhm @ 4.5A, 10V 5V @ 250µA 17nC @ 10V 644pF @ 100V 25W Through Hole TO-220-3 Full Pack
STP11N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 480 mOhm @ 4.5A, 10V 5V @ 250µA 17nC @ 10V 644pF @ 100V 85W Through Hole TO-220-3
DMG9N65CTI DIODES INC
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 1.3 Ohm @ 4.5A, 10V 5V @ 250µA 39nC @ 10V 2310pF @ 25V 13W Through Hole TO-220-3
IPP60R385CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 385 mOhm @ 5.2A, 10V 3.5V @ 340µA 22nC @ 10V 790pF @ 100V 83W Through Hole TO-220-3
IPI60R385CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 385 mOhm @ 5.2A, 10V 3.5V @ 340µA 22nC @ 10V 790pF @ 100V 83W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPD60R385CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 385 mOhm @ 5.2A, 10V 3.5V @ 340µA 22nC @ 10V 790pF @ 100V 83W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STP10NM65N STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 480 mOhm @ 4.5A, 10V 4V @ 250µA 25nC @ 10V 850pF @ 50V 90W Through Hole TO-220-3