650V,Drain to Source Voltage (Vdss)
8.5A (Tc),Current - Continuous Drain (Id) @ 25°C
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STL12N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 530 mOhm @ 4.25A, 10V 5V @ 250µA 17nC @ 10V 644pF @ 100V 48W Surface Mount 8-PowerVDFN
STP12N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 430 mOhm @ 4.3A, 10V 5V @ 250µA 22nC @ 10V 900pF @ 100V 70W Through Hole TO-220-3
STF12N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 430 mOhm @ 4.3A, 10V 5V @ 250µA 22nC @ 10V 900pF @ 100V 25W Through Hole TO-220-5 Full Pack
2SK4089LS ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 720 mOhm @ 6A, 10V - 45.4nC @ 10V 1200pF @ 30V 2W Through Hole TO-220-3 Full Pack
STD12N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 430 mOhm @ 4.3A, 10V 5V @ 250µA 22nC @ 10V 900pF @ 100V 70W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STU12N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 430 mOhm @ 4.3A, 10V 5V @ 250µA 22nC @ 10V 900pF @ 100V 70W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
STI12N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 430 mOhm @ 4.3A, 10V 5V @ 250µA 22nC @ 10V 900pF @ 100V 70W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRFB9N65APBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 930 mOhm @ 5.1A, 10V 4V @ 250µA 48nC @ 10V 1417pF @ 25V 167W Through Hole TO-220-3
IRFB9N65A VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 650V 8.5A (Tc) 930 mOhm @ 5.1A, 10V 4V @ 250µA 48nC @ 10V 1417pF @ 25V 167W Through Hole TO-220-3