650V,Drain to Source Voltage (Vdss)
42A (Tc),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STF57N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 42A (Tc) 63 mOhm @ 21A, 10V 5V @ 250µA 98nC @ 10V 4200pF @ 100V 40W Through Hole TO-220-3 Full Pack
STP57N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 42A (Tc) 63 mOhm @ 21A, 10V 5V @ 250µA 98nC @ 10V 4200pF @ 100V 250W Through Hole TO-220-3
STW57N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 42A (Tc) 63 mOhm @ 21A, 10V 5V @ 250µA 98nC @ 10V 4200pF @ 100V 250W Through Hole TO-247-3
STI57N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 42A (Tc) 63 mOhm @ 21A, 10V 5V @ 250µA 98nC @ 10V 4200pF @ 100V 250W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
STWA57N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 42A (Tc) 63 mOhm @ 21A, 10V 5V @ 250µA 98nC @ 10V 4200pF @ 100V 250W Through Hole TO-247-3
STW57N65M5-4 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 42A (Tc) 63 mOhm @ 21A, 10V 5V @ 250µA 98nC @ 10V 4200pF @ 100V 250W Through Hole TO-247-4
STB57N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 42A (Tc) 63 mOhm @ 21A, 10V 5V @ 250µA 98nC @ 10V 4200pF @ 100V 250W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB