| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPI60R165CP | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 192W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| SIHP21N65EF-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 106nC @ 10V | 2322pF @ 100V | 208W | Through Hole | TO-220-3 |
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