650V,Drain to Source Voltage (Vdss)
-,Package / Case
12 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STY139N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 130A (Tc) 17 mOhm @ 65A, 10V 5V @ 250µA 363nC @ 10V 15600pF @ 100V 625W Through Hole -
STY112N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 96A (Tc) 22 mOhm @ 47A, 10V 5V @ 250µA 350nC @ 10V 16870pF @ 100V 625W Through Hole -
STY145N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 138A (Tc) 15 Ohm @ 69A, 10V 5V @ 250µA 414nC @ 10V 18500pF @ 100V 625W Through Hole -
STL19N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 2.3A (Ta), 12.5A (Tc) 240 mOhm @ 7.5A, 10V 5V @ 250µA 31nC @ 10V 1240pF @ 100V 2.8W - -
STL31N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 2.8A (Ta), 15A (Tc) 162 mOhm @ 11A, 10V 5V @ 250µA 45nC @ 10V 1865pF @ 100V 125W - -
STL22N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 15A (Tc) 210 mOhm @ 8.5A, 10V 5V @ 250µA 36nC @ 10V 1345pF @ 100V 110W Surface Mount -
STB10N65K3 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 10A (Tc) 1 Ohm @ 3.6A, 10V 4.5V @ 100µA 42nC @ 10V 1180pF @ 25V 150W - -
STL38N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 3.5A (Ta), 22.5A (Tc) 105 mOhm @ 12.5A, 10V 5V @ 250µA 71nC @ 10V 3000pF @ 100V 150W - -
STW69N65M5-4 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 58A (Tc) 45 mOhm @ 29A, 10V 5V @ 250µA 143nC @ 10V 6420pF @ 100V 330W - -
STL21N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 17A (Tc) 179 mOhm @ 8.5A, 10V 5V @ 250µA 50nC @ 10V 1950pF @ 100V 3W Surface Mount -