620V,Drain to Source Voltage (Vdss)
4V @ 250µA,Vgs(th) (Max) @ Id
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SIHD6N62E-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 620V 6A (Tc) 900 mOhm @ 3A, 10V 4V @ 250µA 34nC @ 10V 578pF @ 100V 78W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SIHU6N62E-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 620V 6A (Tc) 900 mOhm @ 3A, 10V 4V @ 250µA 34nC @ 10V 578pF @ 100V 78W Through Hole TO-251-3 Long Leads, IPak, TO-251AB