| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTD5862N-1G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 98A (Tc) | 5.7 mOhm @ 45A, 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | 96W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| RFP30N06LE | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 30A (Ta) | 47 mOhm @ 30A, 5V | 2V @ 250µA | 62nC @ 10V | 1350pF @ 25V | 96W | Through Hole | TO-220-3 | |
| BUK7613-60E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 58A (Ta) | 13 mOhm @ 15A, 10V | 4V @ 1mA | 22.9nC @ 10V | 1730pF @ 25V | 96W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BUK9515-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 54A (Ta) | 13 mOhm @ 15A, 10V | 2.1V @ 1mA | 20.5nC @ 5V | 2651pF @ 25V | 96W | Through Hole | TO-220-3 | |
| BUK7514-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 58A (Ta) | 13 mOhm @ 15A, 10V | 4V @ 1mA | 22.9nC @ 10V | 1730pF @ 25V | 96W | Through Hole | TO-220-3 | |
| BUK9E15-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 54A (Ta) | 13 mOhm @ 15A, 10V | 2.1V @ 1mA | 20.5nC @ 5V | 2651pF @ 25V | 96W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK7E13-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 58A (Ta) | 13 mOhm @ 15A, 10V | 4V @ 1mA | 22.9nC @ 10V | 1730pF @ 25V | 96W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK9614-60E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 56A (Ta) | 12.8 mOhm @ 15A, 10V | 2.1V @ 1mA | 20.5nC @ 5V | 2651pF @ 25V | 96W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SI7138DP-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 30A (Tc) | 7.8 mOhm @ 19.7A, 10V | 4V @ 250µA | 135nC @ 10V | 6900pF @ 30V | 96W | Surface Mount | PowerPAK® SO-8 | |
| SI7138DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 30A (Tc) | 7.8 mOhm @ 19.7A, 10V | 4V @ 250µA | 135nC @ 10V | 6900pF @ 30V | 96W | Surface Mount | PowerPAK® SO-8 |
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