NTB5605PT4G |
ON SEMICONDUCTOR |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18.5A (Ta)
|
140 mOhm @ 8.5A, 5V
|
2V @ 250µA
|
22nC @ 5V
|
1190pF @ 25V
|
88W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
NTBV5605T4G |
ON SEMICONDUCTOR |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18.5A (Ta)
|
140 mOhm @ 8.5A, 5V
|
2V @ 250µA
|
22nC @ 5V
|
1190pF @ 25V
|
88W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
TK60S06K3L(T6L1,NQ |
TOSHIBA CORP |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
60A (Ta)
|
8 mOhm @ 30A, 10V
|
3V @ 1mA
|
60nC @ 10V
|
2900pF @ 10V
|
88W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
NTB5605P |
ON SEMICONDUCTOR |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18.5A (Ta)
|
140 mOhm @ 8.5A, 5V
|
2V @ 250µA
|
22nC @ 5V
|
1190pF @ 25V
|
88W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
NTB5605PG |
ON SEMICONDUCTOR |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18.5A (Ta)
|
140 mOhm @ 8.5A, 5V
|
2V @ 250µA
|
22nC @ 5V
|
1190pF @ 25V
|
88W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
NTB5605PT4 |
ON SEMICONDUCTOR |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18.5A (Ta)
|
140 mOhm @ 8.5A, 5V
|
2V @ 250µA
|
22nC @ 5V
|
1190pF @ 25V
|
88W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
NTB5605T4G |
ON SEMICONDUCTOR |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18.5A (Ta)
|
140 mOhm @ 8.5A, 5V
|
2V @ 250µA
|
22nC @ 5V
|
1190pF @ 25V
|
88W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
IRF9Z34PBF |
VISHAY SILICONIX |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18A (Tc)
|
140 mOhm @ 11A, 10V
|
4V @ 250µA
|
34nC @ 10V
|
1100pF @ 25V
|
88W
|
Through Hole
|
TO-220-3
|
IRFZ34PBF |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
30A (Tc)
|
50 mOhm @ 18A, 10V
|
4V @ 250µA
|
46nC @ 10V
|
1200pF @ 25V
|
88W
|
Through Hole
|
TO-220-3
|
IRLZ34PBF |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
30A (Tc)
|
50 mOhm @ 18A, 5V
|
2V @ 250µA
|
35nC @ 5V
|
1600pF @ 25V
|
88W
|
Through Hole
|
TO-220-3
|