NDB5060L |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
26A (Tc)
|
35 mOhm @ 13A, 10V
|
2V @ 250µA
|
24nC @ 5V
|
840pF @ 30V
|
68W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
TJ30S06M3L(T6L1,NQ |
TOSHIBA CORP |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
30A (Ta)
|
21.8 mOhm @ 15A, 10V
|
3V @ 1mA
|
80nC @ 10V
|
3950pF @ 10V
|
68W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
IPD400N06N G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
27A (Tc)
|
40 mOhm @ 27A, 10V
|
4V @ 28µA
|
17nC @ 10V
|
650pF @ 30V
|
68W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
IPD350N06L G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
29A (Tc)
|
35 mOhm @ 29A, 10V
|
2V @ 28µA
|
13nC @ 5V
|
800pF @ 30V
|
68W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
IRFZ34E |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
28A (Tc)
|
42 mOhm @ 17A, 10V
|
4V @ 250µA
|
30nC @ 10V
|
680pF @ 25V
|
68W
|
Through Hole
|
TO-220-3
|
IRFZ34EPBF |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
28A (Tc)
|
42 mOhm @ 17A, 10V
|
4V @ 250µA
|
30nC @ 10V
|
680pF @ 25V
|
68W
|
Through Hole
|
TO-220-3
|
NTD5413NT4G |
ON SEMICONDUCTOR |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
30A (Ta)
|
26 mOhm @ 20A, 10V
|
4V @ 250µA
|
46nC @ 10V
|
1725pF @ 25V
|
68W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
NVD5413NT4G |
ON SEMICONDUCTOR |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
30A
|
26 mOhm @ 20A, 10V
|
4V @ 250µA
|
46nC @ 10V
|
1725pF @ 25V
|
68W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
IRF9Z34 |
VISHAY SILICONIX |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18A (Tc)
|
140 mOhm @ 11A, 10V
|
4V @ 250µA
|
34nC @ 10V
|
1100pF @ 25V
|
68W
|
Through Hole
|
TO-220-3
|