60V,Drain to Source Voltage (Vdss)
68W,Power - Max
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NDB5060L FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 26A (Tc) 35 mOhm @ 13A, 10V 2V @ 250µA 24nC @ 5V 840pF @ 30V 68W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TJ30S06M3L(T6L1,NQ TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 60V 30A (Ta) 21.8 mOhm @ 15A, 10V 3V @ 1mA 80nC @ 10V 3950pF @ 10V 68W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPD400N06N G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 27A (Tc) 40 mOhm @ 27A, 10V 4V @ 28µA 17nC @ 10V 650pF @ 30V 68W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPD350N06L G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 29A (Tc) 35 mOhm @ 29A, 10V 2V @ 28µA 13nC @ 5V 800pF @ 30V 68W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFZ34E INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 28A (Tc) 42 mOhm @ 17A, 10V 4V @ 250µA 30nC @ 10V 680pF @ 25V 68W Through Hole TO-220-3
IRFZ34EPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 28A (Tc) 42 mOhm @ 17A, 10V 4V @ 250µA 30nC @ 10V 680pF @ 25V 68W Through Hole TO-220-3
NTD5413NT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 30A (Ta) 26 mOhm @ 20A, 10V 4V @ 250µA 46nC @ 10V 1725pF @ 25V 68W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5413NT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 30A 26 mOhm @ 20A, 10V 4V @ 250µA 46nC @ 10V 1725pF @ 25V 68W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9Z34 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 68W Through Hole TO-220-3