60V,Drain to Source Voltage (Vdss)
52W,Power - Max
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTD5865NLT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 46A (Tc) 16 mOhm @ 20A, 10V 2V @ 250µA 29nC @ 10V 1400pF @ 25V 52W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5865NT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 43A (Tc) 18 mOhm @ 20A, 10V 4V @ 250µA 23nC @ 10V 1261pF @ 25V 52W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STL7DN6LF3 STMICROELECTRONICS
2 N-Channel (Dual) 60V 20A 43 mOhm @ 3A, 10V 3V @ 250µA 8.8nC @ 10V 432pF @ 25V 52W Surface Mount 8-PowerVDFN
NTD5865N-1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 43A (Tc) 18 mOhm @ 20A, 10V 4V @ 250µA 23nC @ 10V 1261pF @ 25V 52W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5865NL-1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 46A (Tc) 16 mOhm @ 20A, 10V 2V @ 250µA 29nC @ 10V 1400pF @ 25V 52W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
SIS862DN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 40A (Tc) 8.5 mOhm @ 20A, 10V 2.6V @ 250µA 32nC @ 10V 1320pF @ 30V 52W Surface Mount PowerPAK® 1212-8