| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STU10P6F6 | STMICROELECTRONICS | MOSFET P-Channel, Metal Oxide | 60V | 10A (Tc) | 160 mOhm @ 5A, 10V | 4V @ 250µA | 6.4nC @ 10V | 340pF @ 48V | 35W | - | - | |
| STD10P6F6 | STMICROELECTRONICS | MOSFET P-Channel, Metal Oxide | 60V | 10A (Tc) | 160 mOhm @ 5A, 10V | 4V @ 250µA | 6.4nC @ 10V | 340pF @ 48V | 35W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| TK65A10N1,S4X | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 58A (Tc) | 5.4 mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | 3400pF @ 30V | 35W | Through Hole | TO-220-3 Full Pack | |
| TK58A06N1,S4X | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 58A (Tc) | 5.4 mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | 3400pF @ 30V | 35W | Through Hole | TO-220-3 Full Pack | |
| 2SK3662(F) | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 35A (Ta) | 12.5 mOhm @ 18A, 10V | 2.5V @ 1mA | 91nC @ 10V | 5120pF @ 10V | 35W | Through Hole | TO-220-3 Full Pack | |
| SQJ964EP-T1-GE3 | VISHAY SILICONIX | 2 N-Channel (Dual) | 60V | 8A | 28 mOhm @ 9.6A, 10V | 4.5V @ 250µA | 57nC @ 10V | 2900pF @ 30V | 35W | Surface Mount | PowerPAK® SO-8 Dual |
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