60V,Drain to Source Voltage (Vdss)
4V @ 250µA,Vgs(th) (Max) @ Id
300W,Power - Max
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STP260N6F6 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 120A (Tc) 3 mOhm @ 60A, 10V 4V @ 250µA 183nC @ 10V 11400pF @ 25V 300W Through Hole TO-220-3
STP80NF06 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 8 mOhm @ 40A, 10V 4V @ 250µA 150nC @ 10V 3850pF @ 25V 300W Through Hole TO-220-3
STH260N6F6-2 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 180A (Tc) 2.4 mOhm @ 60A, 10V 4V @ 250µA 183nC @ 10V 11800pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STW80NF06 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 8 mOhm @ 40A, 10V 4V @ 250µA 150nC @ 10V 3850pF @ 25V 300W Through Hole TO-247-3
IRFP064PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 70A (Tc) 9 mOhm @ 78A, 10V 4V @ 250µA 190nC @ 10V 7400pF @ 25V 300W Through Hole TO-247-3
IRFP064 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 70A (Tc) 9 mOhm @ 78A, 10V 4V @ 250µA 190nC @ 10V 7400pF @ 25V 300W Through Hole TO-247-3