60V,Drain to Source Voltage (Vdss)
136W,Power - Max
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPD127N06L G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 12.7 mOhm @ 50A, 10V 2V @ 80µA 69nC @ 10V 2300pF @ 30V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPD144N06N G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 14.4 mOhm @ 50A, 10V 4V @ 80µA 54nC @ 10V 1900pF @ 30V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N06-07L-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 96A (Tc) 7.4 mOhm @ 20A, 10V 3V @ 250µA 144nC @ 10V 5800pF @ 25V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N06-07L-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 96A (Tc) 7.4 mOhm @ 20A, 10V 3V @ 250µA 144nC @ 10V 5800pF @ 25V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N06-09L-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 9.3 mOhm @ 20A, 10V 3V @ 250µA 70nC @ 10V 2650pF @ 25V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SQR50N06-07L-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 7.6 mOhm @ 20A, 10V 2.5V @ 250µA 120nC @ 10V 5570pF @ 25V 136W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SQD50P06-15L-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 50A (Tc) 15.5 mOhm @ 17A, 10V 2.5V @ 250µA 150nC @ 10V 5910pF @ 25V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SQD50N06-07L-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 7.6 mOhm @ 20A, 10V 2.5V @ 250µA 120nC @ 10V 5570pF @ 25V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SQD50N06-09L-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 9 mOhm @ 20A, 10V 2.5V @ 250µA 72nC @ 10V 3065pF @ 25V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63