60V,Drain to Source Voltage (Vdss)
120W,Power - Max
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQP27P06 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 27A (Tc) 70 mOhm @ 13.5A, 10V 4V @ 250µA 43nC @ 10V 1400pF @ 25V 120W Through Hole TO-220-3
FQP50N06 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 50A 22 mOhm @ 25A, 10V 4V @ 250µA 41nC @ 10V 1540pF @ 25V 120W Through Hole TO-220-3
FQP27P06_SW82127 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 27A (Tc) 70 mOhm @ 13.5A, 10V 4V @ 250µA 43nC @ 10V 1400pF @ 25V 120W Through Hole TO-220-3
STD80N6F6 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 6.5 mOhm @ 40A, 10V 4.5V @ 250µA 122nC @ 10V 7480pF @ 25V 120W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
PHP52N06T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 52A (Tc) 22 mOhm @ 25A, 10V 4V @ 1mA 36nC @ 10V 1592pF @ 25V 120W Through Hole TO-220-3
NTB25P06T4G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 27.5A (Ta) 82 mOhm @ 25A, 10V 4V @ 250µA 50nC @ 10V 1680pF @ 25V 120W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVB25P06T4G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 27.5A (Ta) 82 mOhm @ 25A, 10V 4V @ 250µA 50nC @ 10V 1680pF @ 25V 120W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTB25P06 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 27.5A (Ta) 82 mOhm @ 25A, 10V 4V @ 250µA 50nC @ 10V 1680pF @ 25V 120W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTB25P06G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 27.5A (Ta) 82 mOhm @ 25A, 10V 4V @ 250µA 50nC @ 10V 1680pF @ 25V 120W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB