| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TK50E06K3A,S1X(S | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 50A | 8.5 mOhm @ 25A, 10V | - | 54nC @ 10V | - | 104W | Through Hole | TO-220-3 | |
| SIR662DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 60A | 2.7 mOhm @ 20A, 10V | 2.5V @ 250µA | 96nC @ 10V | 4390pF @ 30V | 104W | Surface Mount | PowerPAK® SO-8 | |
| SI7164DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 60A (Tc) | 6.25 mOhm @ 10A, 10V | 4.5V @ 250µA | 75nC @ 10V | 2830pF @ 30V | 104W | Surface Mount | PowerPAK® SO-8 |
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