60V,Drain to Source Voltage (Vdss)
400pF @ 25V,Input Capacitance (Ciss) @ Vds
30 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STP20NF06L STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 20A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 7.5nC @ 10V 400pF @ 25V 60W Through Hole TO-220-3
STP20NF06 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 20A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 18nC @ 10V 400pF @ 25V 60W Through Hole TO-220-3
STF20NF06 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 20A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 18nC @ 10V 400pF @ 25V 28W Through Hole TO-220-3 Full Pack
STF20NF06L STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 20A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 7.5nC @ 10V 400pF @ 25V 28W Through Hole TO-220-3 Full Pack
IRLL014PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 2.7A (Tc) 200 mOhm @ 1.6A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 2W Surface Mount TO-261-4, TO-261AA
IRLZ14PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 10A (Tc) 200 mOhm @ 6A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 43W Through Hole TO-220-3
IRLL014TRPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 2.7A (Tc) 200 mOhm @ 1.6A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 2W Surface Mount TO-261-4, TO-261AA
IRLR014PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A (Tc) 200 mOhm @ 4.6A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR014 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A (Tc) 200 mOhm @ 4.6A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRLD014PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 1.7A (Ta) 200 mOhm @ 1A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 1.3W Through Hole 4-DIP (0.300", 7.62mm)