| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TPH5R906NH,L1Q | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 28A (Ta) | 5.9 mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | 3100pF @ 30V | 57W | Surface Mount | 8-PowerVDFN | |
| SIE876DF-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 22A (Ta), 60A (Tc) | 6.1 mOhm @ 20A, 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | 125W | Surface Mount | 10-PolarPAK® (L) | |
| SIE816DF-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 19.8A (Ta), 60A (Tc) | 7.4 mOhm @ 19.8A, 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | 125W | Surface Mount | 10-PolarPAK® (L) | |
| SIE816DF-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 19.8A (Ta), 60A (Tc) | 7.4 mOhm @ 19.8A, 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | 125W | Surface Mount | 10-PolarPAK® (L) |
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