| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPD230N06N G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 30A (Tc) | 23 mOhm @ 30A, 10V | 4V @ 50µA | 31nC @ 10V | 1100pF @ 30V | 100W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SI4436DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 8A (Tc) | 36 mOhm @ 4.6A, 10V | 2.5V @ 250µA | 32nC @ 10V | 1100pF @ 30V | 5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI5476DU-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 12A (Tc) | 34 mOhm @ 4.6A, 10V | 3V @ 250µA | 32nC @ 10V | 1100pF @ 30V | 31W | Surface Mount | - | |
| SI4436DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 8A (Tc) | 36 mOhm @ 4.6A, 10V | 2.5V @ 250µA | 32nC @ 10V | 1100pF @ 30V | 5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI5476DU-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 12A (Tc) | 34 mOhm @ 4.6A, 10V | 3V @ 250µA | 32nC @ 10V | 1100pF @ 30V | 31W | Surface Mount | - |
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