60V,Drain to Source Voltage (Vdss)
11000pF @ 30V,Input Capacitance (Ciss) @ Vds
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSC031N06NS3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 100A (Tc) 3.1 mOhm @ 50A, 10V 4V @ 93µA 130nC @ 10V 11000pF @ 30V 139W Surface Mount 8-PowerTDFN
IPP040N06N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 90A (Tc) 4 mOhm @ 90A, 10V 4V @ 90µA 98nC @ 10V 11000pF @ 30V 188W Through Hole TO-220-3
IPD034N06N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 100A (Tc) 3.4 mOhm @ 100A, 10V 4V @ 93µA 130nC @ 10V 11000pF @ 30V 167W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPB037N06N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 90A 3.7 mOhm @ 90A, 10V 4V @ 90µA 98nC @ 10V 11000pF @ 30V 188W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPI040N06N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 90A (Tc) 4 mOhm @ 90A, 10V 4V @ 90µA 98nC @ 10V 11000pF @ 30V 188W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPB034N06N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 100A (Tc) 3.4 mOhm @ 100A, 10V 4V @ 93µA 130nC @ 10V 11000pF @ 30V 167W Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB