60V,Drain to Source Voltage (Vdss)
87nC @ 10V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FD6M045N06 FAIRCHILD SEMICONDUCTOR CORP
2 N-Channel (Dual) 60V 60A 4.5 mOhm @ 40A, 10V 4V @ 250µA 87nC @ 10V 3890pF @ 25V - Through Hole EPM15
2SJ673-AZ RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 60V 36A (Tc) 20 mOhm @ 18A, 10V - 87nC @ 10V 4600pF @ 10V 2W Through Hole TO-220-3 Isolated Tab
TPC8048-H(TE12L,Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 16A (Ta) 6.9 mOhm @ 8A, 10V 2.3V @ 1mA 87nC @ 10V 7540pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)
TK70D06J1(Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 70A (Ta) 6.4 mOhm @ 35A, 10V 2.3V @ 1mA 87nC @ 10V 5450pF @ 10V 140W Through Hole TO-220-3