| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NVD5117PLT4G | ON SEMICONDUCTOR | MOSFET P-Channel, Metal Oxide | 60V | 11A (Ta), 61A (Tc) | 16 mOhm @ 29A, 10V | 2.5V @ 250µA | 85nC @ 10V | 4800pF @ 25V | 4.1W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| TK80S06K3L(T6L1,NQ | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 80A (Ta) | 5.5 mOhm @ 40A, 10V | 3V @ 1mA | 85nC @ 10V | 4200pF @ 10V | 100W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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