| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTD5862NT4G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 98A (Tc) | 5.7 mOhm @ 45A, 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | 115W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| NTD5862N-1G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 98A (Tc) | 5.7 mOhm @ 45A, 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | 96W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPA057N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 60A (Tc) | 5.7 mOhm @ 60A, 10V | 4V @ 58µA | 82nC @ 10V | 6600pF @ 30V | 38W | Through Hole | TO-220-3 Full Pack | |
| IPB054N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 80A | 5.4 mOhm @ 80A, 10V | 4V @ 58µA | 82nC @ 10V | 6600pF @ 30V | 115W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPP057N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 58µA | 82nC @ 10V | 6600pF @ 30V | 115W | Through Hole | TO-220-3 | |
| IPD053N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 90A | 5.3 mOhm @ 90A, 10V | 4V @ 58µA | 82nC @ 10V | 6600pF @ 30V | 115W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| BUK764R4-60E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Ta) | 4.5 mOhm @ 25A, 10V | 4V @ 1mA | 82nC @ 10V | 6230pF @ 25V | 234W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BUK7E4R6-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Ta) | 4.6 mOhm @ 25A, 10V | 4V @ 1mA | 82nC @ 10V | 6230pF @ 25V | 234W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK754R7-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Ta) | 4.6 mOhm @ 25A, 10V | 4V @ 1mA | 82nC @ 10V | 6230pF @ 25V | 234W | Through Hole | TO-220-3 | |
| NVD5862NT4G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 18A (Ta), 98A (Tc) | 5.7 mOhm @ 48A, 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | 4.1W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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