60V,Drain to Source Voltage (Vdss)
81nC @ 10V,Gate Charge (Qg) @ Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTB60N06T4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A (Ta) 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 2.4W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVB60N06T4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 2.4W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPD90N06S4-05 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 90A (Tc) 5.1 mOhm @ 90A, 10V 4V @ 60µA 81nC @ 10V 6500pF @ 25V 107W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPB80N06S4-05 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 5.4 mOhm @ 80A, 10V 4V @ 60µA 81nC @ 10V 6500pF @ 25V 107W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPI80N06S4-05 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 5.7 mOhm @ 80A, 10V 4V @ 60µA 81nC @ 10V 6500pF @ 25V 107W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP80N06S4-05 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 5.7 mOhm @ 80A, 10V 4V @ 60µA 81nC @ 10V 6500pF @ 25V 107W Through Hole TO-220-3
NTP60N06 ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A (Ta) 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 2.4W Through Hole TO-220-3
NTP60N06G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A (Ta) 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 2.4W Through Hole TO-220-3
NTB60N06G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A (Ta) 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 2.4W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB