60V,Drain to Source Voltage (Vdss)
6nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
RHK003N06T146 ROHM CO LTD
MOSFET N-Channel, Metal Oxide 60V 300mA (Ta) 1 Ohm @ 300mA, 10V 2.5V @ 1mA 6nC @ 10V 33pF @ 10V 200mW Surface Mount TO-236-3, SC-59, SOT-23-3
BSR315P L6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 620mA (Ta) 800 mOhm @ 620mA, 10V 2V @ 160µA 6nC @ 10V 176pF @ 25V 500mW Surface Mount TO-236-3, SC-59, SOT-23-3
CPH3351-TL-H ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 1.8A (Ta) 250 mOhm @ 1A, 10V - 6nC @ 10V 262pF @ 20V 1W Surface Mount SC-96
UPA2756GR-E1-AT RENESAS ELECTRONICS CORP
2 N-Channel (Dual) 60V 4A 105 mOhm @ 2A, 10V 2.5V @ 1mA 6nC @ 10V 260pF @ 10V 2W Surface Mount 8-SOIC (0.173", 4.40mm Width)
UPA2756GR-E2-AT RENESAS ELECTRONICS CORP
2 N-Channel (Dual) 60V 4A 105 mOhm @ 2A, 10V 2.5V @ 1mA 6nC @ 10V 260pF @ 10V 2W Surface Mount 8-SOIC (0.173", 4.40mm Width)
RK7002AT116 ROHM CO LTD
MOSFET N-Channel, Metal Oxide 60V 300mA (Ta) 1 Ohm @ 300mA, 10V 2.5V @ 1mA 6nC @ 10V 33pF @ 10V 200mW Surface Mount TO-236-3, SC-59, SOT-23-3
2SK2615(TE12L,F) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 2A (Ta) 300 mOhm @ 1A, 10V 2V @ 1mA 6nC @ 10V 150pF @ 10V 500mW Surface Mount TO-243AA