60V,Drain to Source Voltage (Vdss)
6.4nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STP10P6F6 STMICROELECTRONICS
MOSFET P-Channel, Metal Oxide 60V 10A (Tc) 160 mOhm @ 5A, 10V 4V @ 250µA 6.4nC @ 10V 340pF @ 48V 30W Through Hole TO-220-3
STS3P6F6 STMICROELECTRONICS
MOSFET P-Channel, Metal Oxide 60V - 160 mOhm @ 1.5A, 10V 4V @ 250µA 6.4nC @ 10V 340pF @ 48V 2.7W Surface Mount 8-SOIC (0.154", 3.90mm Width)
STL12P6F6 STMICROELECTRONICS
MOSFET P-Channel, Metal Oxide 60V 4A (Tc) 160 mOhm @ 1.5A, 10V 4V @ 250µA 6.4nC @ 10V 340pF @ 48V 75W Surface Mount 8-PowerVDFN
STU10P6F6 STMICROELECTRONICS
MOSFET P-Channel, Metal Oxide 60V 10A (Tc) 160 mOhm @ 5A, 10V 4V @ 250µA 6.4nC @ 10V 340pF @ 48V 35W - -
STN3P6F6 STMICROELECTRONICS
MOSFET P-Channel, Metal Oxide 60V - 160 mOhm @ 1.5A, 10V 4V @ 250µA 6.4nC @ 10V 340pF @ 48V 2.6W Surface Mount TO-261-4, TO-261AA
STF10P6F6 STMICROELECTRONICS
MOSFET P-Channel, Metal Oxide 60V 10A (Tc) 160 mOhm @ 5A, 10V 4V @ 250µA 6.4nC @ 10V 340pF @ 48V 20W Through Hole TO-220-3 Full Pack
STD10P6F6 STMICROELECTRONICS
MOSFET P-Channel, Metal Oxide 60V 10A (Tc) 160 mOhm @ 5A, 10V 4V @ 250µA 6.4nC @ 10V 340pF @ 48V 35W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
CPH3324-TL-E SANYO SEMICONDUCTOR CO LTD
MOSFET P-Channel, Metal Oxide 60V 1.2A (Ta) 530 mOhm @ 600mA, 10V - 6.4nC @ 10V 265pF @ 20V 1W Surface Mount SC-96